Цитата(ZZZRF413 @ Oct 13 2015, 16:39)

При цикле в 35 нс, на проведение 10^14 циклов у Вас уйдет ~ 40 дней.
А по теме мне например вот такая статья попалась...
http://www.everspin.com/sites/default/file..._MRAM_Study.pdfв этом документе же написано
4.2 Endurance
MTJ-based MRAM has virtually unlimited program/erase/read endurance, meaning you can
write/read/erase the memory array virtually forever without degrading the MTJ’s ability to change or
maintain its bit state. Toggling the magnetic moment of the free SAF layer to change bit state is a
nondestructive process as charge transport does not occur, except for a small tunnel current across the
AlOx barrier. MRAM datasheets typically quote about 10^15 cycles for their endurance specification. This
is effectively unlimited endurance as it takes over 300 years to write just 100,000 addresses even 10^12
times (assuming 100 ns write-cycle time).
MRAMs are expected to have very high endurance and testing to date has demonstrated this. One of the
largest customers of MRAM is Siemens. Siemens uses Everspin MRAM in over 250,000 systems and has
reported zero field failures